BSS123TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

10 ns

Power Dissipation :

300mW

Terminal Form :

Gull wing

Contact Plating :

Tin

Length :

2.9mm

Max Junction Temperature (Tj) :

150°C

Power Dissipation-Max :

360mW Ta

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

100V

Element Configuration :

Single

Published :

2012

Drain to Source Breakdown Voltage :

100V

Number of Channels :

1

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA

Threshold Voltage :

1.4V

Resistance :

6Ohm

Continuous Drain Current (ID) :

170mA

Rise Time :

10ns

Packaging :

Tape and Reel (TR)

Nominal Vgs :

2.2 V

Height :

1.1mm

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Current Rating :

170mA

Transistor Application :

SWITCHING

Mount :

Surface Mount

Lead Free :

Lead Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Width :

1.3mm

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Weight :

7.994566mg

Transistor Element Material :

SILICON

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Terminal Position :

Dual

Factory Lead Time :

17 Weeks

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

3

Turn On Delay Time :

8 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Feedback Cap-Max (Crss) :

4 pF

JESD-609 Code :

e3

Turn-Off Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V