BSS123LT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Drain-source On Resistance-Max :

6Ohm

Turn-Off Delay Time :

40 ns

Power Dissipation-Max :

225mW Ta

Vgs(th) (Max) @ Id :

2.8V @ 1mA

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Element Configuration :

Single

Pbfree Code :

yes

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2008

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

225mW

Continuous Drain Current (ID) :

170mA

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V

Current Rating :

170mA

Rds On (Max) @ Id, Vgs :

6 Ω @ 100mA, 10V

Lead Free :

Lead Free

Number of Elements :

1

RoHS Status :

RoHS Compliant

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Package / Case :

TO-236-3, SC-59, SOT-23-3