BSS123LT1G
- Mfr.Part #
- BSS123LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 170MA SOT23-3
- Stock
- 71,400
- In Stock :
- 71,400
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 20 ns
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Resistance :
- 6Ohm
- ECCN Code :
- EAR99
- Factory Lead Time :
- 15 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 170mA
- Length :
- 3.04mm
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- 800mV
- Turn-Off Delay Time :
- 40 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 100mA, 10V
- Terminal Position :
- Dual
- Current Rating :
- 170mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 100V
- Drain to Source Breakdown Voltage :
- 100V
- Radiation Hardening :
- No
- Nominal Vgs :
- 20 V
- FET Type :
- N-Channel
- Published :
- 2003
- Gate to Source Voltage (Vgs) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 225mW Ta
- Power Dissipation :
- 225mW
- Width :
- 1.4mm
- Vgs(th) (Max) @ Id :
- 2.6V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 20pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Height :
- 1.01mm
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Datasheets
- BSS123LT1G

N-Channel Cut Tape (CT) 6 Ω @ 100mA, 10V ±20V 20pF @ 25V TO-236-3, SC-59, SOT-23-3
BSS123LT1G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 20pF @ 25V.This device conducts a continuous drain current (ID) of 170mA, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 20 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 800mV threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BSS123LT1G Features
a continuous drain current (ID) of 170mA
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 40 ns
a threshold voltage of 800mV
BSS123LT1G Applications
There are a lot of ON Semiconductor
BSS123LT1G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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