BSS123L
- Mfr.Part #
- BSS123L
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 24,836
- In Stock :
- 24,836
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Rise Time :
- 1.7ns
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 21.5pF @ 25V
- Turn On Delay Time :
- 20 ns
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 170mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn-Off Delay Time :
- 40 ns
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Height :
- 1.11mm
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 360mW Ta
- Threshold Voltage :
- 1.6V
- Vgs(th) (Max) @ Id :
- 2V @ 1mA
- Weight :
- 30mg
- Rds On (Max) @ Id, Vgs :
- 6 Ω @ 170mA, 10V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 5.6 ns
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 170mA Ta
- Number of Channels :
- 1
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Drain to Source Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 2.5nC @ 10V
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Published :
- 2012
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Datasheets
- BSS123L

N-Channel Tape & Reel (TR) 6 Ω @ 170mA, 10V ±20V 21.5pF @ 25V 2.5nC @ 10V TO-236-3, SC-59, SOT-23-3
BSS123L Description
This N-channel enhancement mode field effect transistor is produced using high cell density, trench MOSFET technology. This product minimizes on-state resistance while providing rugged, reliable, and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor control, power MOSFET gate drivers, logic level transistor, high-speed line drivers, power management power supply, and switching applications.
BSS123L Features
0.17 A, 100V, Rois/ON)=6Q atVGs= 10V
Ros(ON)= 100atVGs=45V
High-Density Cell Design for Low RDs/ON)
Rugged and Reliable
Compact Industry Standard SOT-23 Surface Mount
Package
Very Low Capacitance
Fast Switching Speed
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