BSS123E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Rise Time :

5ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Rds On (Max) @ Id, Vgs :

6 Ω @ 170mA, 10V

Series :

SIPMOS®

Additional Feature :

LOGIC LEVEL COMPATIBLE

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

FET Type :

N-Channel

Transistor Element Material :

SILICON

Power Dissipation-Max :

360mW Ta

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

69pF @ 25V

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Current Rating :

170mA

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

170mA

Gate Charge (Qg) (Max) @ Vgs :

2.67nC @ 10V

RoHS Status :

RoHS Compliant

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Feedback Cap-Max (Crss) :

6 pF

Terminal Position :

Dual

Power Dissipation :

360mW

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

170mA Ta

Number of Elements :

1

Mounting Type :

Surface Mount

Voltage - Rated DC :

100V

Published :

1999

Vgs (Max) :

±20V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Contains Lead

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V