BSP89 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

4

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

1.4A

Surface Mount :

yes

Published :

2007

HTS Code :

8541.29.00.75

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Drain Current-Max (Abs) (ID) :

0.35A

Terminal Position :

Dual

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.8W Ta

JESD-30 Code :

R-PDSO-G4

Configuration :

SINGLE WITH BUILT-IN DIODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain-source On Resistance-Max :

6Ohm

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Case Connection :

DRAIN

Package / Case :

TO-261-4, TO-261AA

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

ECCN Code :

EAR99

Terminal Form :

Gull wing

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

240V

Series :

SIPMOS®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

DS Breakdown Voltage-Min :

240V

Qualification Status :

Not Qualified

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED