BSP89H6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Dual Supply Voltage :

240V

Mount :

Surface Mount

ECCN Code :

EAR99

Contact Plating :

Tin

Max Dual Supply Voltage :

240V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Published :

2001

Additional Feature :

LOGIC LEVEL COMPATIBLE

Fall Time (Typ) :

18.4 ns

Element Configuration :

Single

Drain to Source Breakdown Voltage :

240V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Number of Channels :

1

Transistor Element Material :

SILICON

Length :

6.5mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Termination :

SMD/SMT

Pbfree Code :

yes

Number of Pins :

4

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

FET Type :

N-Channel

Halogen Free :

Halogen Free

Height :

1.6mm

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

Power Dissipation :

1.7W

Series :

SIPMOS®

Factory Lead Time :

10 Weeks

Vgs(th) (Max) @ Id :

1.8V @ 108μA

Width :

6.7mm

Drain Current-Max (Abs) (ID) :

0.35A

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Package / Case :

TO-261-4, TO-261AA

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

360mA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Turn On Delay Time :

4 ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

15.9 ns

Terminal Position :

Dual

Mounting Type :

Surface Mount

Nominal Vgs :

1.4 V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

1.4V

Power Dissipation-Max :

1.8W Ta

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

6Ohm

Number of Elements :

1

Weight :

250.212891mg

Rise Time :

3.5ns

Pin Count :

4