BSP88L6327

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Mfr.Part #
BSP88L6327
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
22,754
In Stock :
22,754

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance :
95 pF
Subcategory :
FET General Purpose Power
Qualification Status :
Not Qualified
Package Shape :
RECTANGULAR
Package :
Bulk
Drain to Source Breakdown Voltage :
240 V
Turn-Off Delay Time :
17.9 ns
Drain Current-Max (Abs) (ID) :
0.35 A
Continuous Drain Current (ID) :
350 mA
Terminal Position :
Dual
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
20 V
Series :
SIPMOS®
Drive Voltage (Max Rds On, Min Rds On) :
2.8V, 10V
JESD-609 Code :
e3
Vgs (Max) :
±20V
FET Feature :
-
Turn-On Delay Time :
3.6 ns
Manufacturer :
Infineon Technologies AG
Technology :
MOSFET (Metal Oxide)
Additional Feature :
LOGIC LEVEL COMPATIBLE
Input Capacitance (Ciss) (Max) @ Vds :
95 pF @ 25 V
Supplier Device Package :
PG-SOT223-4-21
HTS Code :
8541.29.00.95
Rise Time :
3.5 ns
Terminal Form :
Gull wing
Power Dissipation-Max (Abs) :
1.8 W
Max Operating Temperature :
150 °C
Gate Charge (Qg) (Max) @ Vgs :
6.8 nC @ 10 V
Vgs(th) (Max) @ Id :
1.4V @ 108µA
Nominal Vgs :
1 V
ECCN Code :
EAR99
Power Dissipation (Max) :
1.8W (Ta)
Transistor Element Material :
SILICON
REACH SVHC :
No SVHC
Number of Terminals :
4
Drain to Source Resistance :
6 Ω
Pulsed Drain Current-Max (IDM) :
1.4 A
FET Type :
N-Channel
RoHS :
Compliant
Package / Case :
TO-261-4, TO-261AA
Max Power Dissipation :
1.8 W
Pin Count :
4
Lead Free :
Lead Free
Polarity/Channel Type :
N-Channel
JESD-30 Code :
R-PDSO-G4
Current Rating :
350 mA
Radiation Hardening :
No
Rds On Max :
6 Ω
Surface Mount :
yes
Rds On (Max) @ Id, Vgs :
6Ohm @ 350mA, 10V
Drain to Source Voltage (Vdss) :
240 V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Current - Continuous Drain (Id) @ 25°C :
350mA (Ta)
Number of Pins :
4
Pbfree Code :
yes
Voltage Rating (DC) :
240 V
Configuration :
SINGLE WITH BUILT-IN DIODE
Mounting Type :
Surface Mount
Drain-source On Resistance-Max :
6 Ω
Terminal Finish :
Matte Tin (Sn)
DS Breakdown Voltage-Min :
240 V
Min Operating Temperature :
-55 °C
Product Status :
Active
Case Connection :
DRAIN
Operating Temperature :
-55°C ~ 150°C (TJ)
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Reach Compliance Code :
Compliant
Power Dissipation :
1.8 W
Datasheets
BSP88L6327
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSP88L6327 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Number of Pins:4, Mounting Type:Surface Mount, Operating Temperature:-55°C ~ 150°C (TJ), BSP88L6327 pinout, BSP88L6327 datasheet PDF, BSP88L6327 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSP88L6327 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP88L6327


MOSFET (Metal Oxide) N-Channel 6Ohm @ 350mA, 10V ±20V 95 pF @ 25 V 6.8 nC @ 10 V 240 V TO-261-4, TO-261AA

BSP88L6327 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 95 pF @ 25 V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350 mA amps.In this device, the drain-source breakdown voltage is 240 V and VGS=240 V, so the drain-source breakdown voltage is 240 V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [17.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.4 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 6 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.The DS breakdown voltage should be maintained above 240 V to maintain normal operation.To operate this transistor, you will need a 240 V drain to source voltage (Vdss).

BSP88L6327 Features


a continuous drain current (ID) of 350 mA
a drain-to-source breakdown voltage of 240 V voltage
the turn-off delay time is 17.9 ns
based on its rated peak drain current 1.4 A.
single MOSFETs transistor is 6 Ω
a 240 V drain to source voltage (Vdss)


BSP88L6327 Applications


There are a lot of Infineon
BSP88L6327 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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