BSP88L6327
- Mfr.Part #
- BSP88L6327
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 22,754
- In Stock :
- 22,754
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance :
- 95 pF
- Subcategory :
- FET General Purpose Power
- Qualification Status :
- Not Qualified
- Package Shape :
- RECTANGULAR
- Package :
- Bulk
- Drain to Source Breakdown Voltage :
- 240 V
- Turn-Off Delay Time :
- 17.9 ns
- Drain Current-Max (Abs) (ID) :
- 0.35 A
- Continuous Drain Current (ID) :
- 350 mA
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20 V
- Series :
- SIPMOS®
- Drive Voltage (Max Rds On, Min Rds On) :
- 2.8V, 10V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- FET Feature :
- -
- Turn-On Delay Time :
- 3.6 ns
- Manufacturer :
- Infineon Technologies AG
- Technology :
- MOSFET (Metal Oxide)
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Input Capacitance (Ciss) (Max) @ Vds :
- 95 pF @ 25 V
- Supplier Device Package :
- PG-SOT223-4-21
- HTS Code :
- 8541.29.00.95
- Rise Time :
- 3.5 ns
- Terminal Form :
- Gull wing
- Power Dissipation-Max (Abs) :
- 1.8 W
- Max Operating Temperature :
- 150 °C
- Gate Charge (Qg) (Max) @ Vgs :
- 6.8 nC @ 10 V
- Vgs(th) (Max) @ Id :
- 1.4V @ 108µA
- Nominal Vgs :
- 1 V
- ECCN Code :
- EAR99
- Power Dissipation (Max) :
- 1.8W (Ta)
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Terminals :
- 4
- Drain to Source Resistance :
- 6 Ω
- Pulsed Drain Current-Max (IDM) :
- 1.4 A
- FET Type :
- N-Channel
- RoHS :
- Compliant
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 1.8 W
- Pin Count :
- 4
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- N-Channel
- JESD-30 Code :
- R-PDSO-G4
- Current Rating :
- 350 mA
- Radiation Hardening :
- No
- Rds On Max :
- 6 Ω
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 6Ohm @ 350mA, 10V
- Drain to Source Voltage (Vdss) :
- 240 V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Current - Continuous Drain (Id) @ 25°C :
- 350mA (Ta)
- Number of Pins :
- 4
- Pbfree Code :
- yes
- Voltage Rating (DC) :
- 240 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 6 Ω
- Terminal Finish :
- Matte Tin (Sn)
- DS Breakdown Voltage-Min :
- 240 V
- Min Operating Temperature :
- -55 °C
- Product Status :
- Active
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Reach Compliance Code :
- Compliant
- Power Dissipation :
- 1.8 W
- Datasheets
- BSP88L6327

MOSFET (Metal Oxide) N-Channel 6Ohm @ 350mA, 10V ±20V 95 pF @ 25 V 6.8 nC @ 10 V 240 V TO-261-4, TO-261AA
BSP88L6327 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 95 pF @ 25 V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 350 mA amps.In this device, the drain-source breakdown voltage is 240 V and VGS=240 V, so the drain-source breakdown voltage is 240 V in this case.A device can conduct a maximum continuous current of [0.35 A] according to its drain current.It is [17.9 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 1.4 A.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 6 Ω.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.The DS breakdown voltage should be maintained above 240 V to maintain normal operation.To operate this transistor, you will need a 240 V drain to source voltage (Vdss).
BSP88L6327 Features
a continuous drain current (ID) of 350 mA
a drain-to-source breakdown voltage of 240 V voltage
the turn-off delay time is 17.9 ns
based on its rated peak drain current 1.4 A.
single MOSFETs transistor is 6 Ω
a 240 V drain to source voltage (Vdss)
BSP88L6327 Applications
There are a lot of Infineon
BSP88L6327 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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