BSP88E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

240V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Vgs(th) (Max) @ Id :

1.4V @ 108µA

Terminal Finish :

MATTE TIN

Additional Feature :

LOGIC LEVEL COMPATIBLE

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 4.5V

JESD-609 Code :

e3

Rise Time :

10ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Continuous Drain Current (ID) :

350mA

Terminal Position :

Dual

HTS Code :

8541.29.00.75

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

95pF @ 25V

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

1.4A

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

SIPMOS®

Number of Terminations :

4

Pin Count :

4

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

6 Ω @ 350mA, 10V

JESD-30 Code :

R-PDSO-G4

Drain Current-Max (Abs) (ID) :

0.35A

Packaging :

Tape and Reel (TR)

Current Rating :

320mA

Mount :

Surface Mount

Package / Case :

TO-261-4, TO-261AA

ECCN Code :

EAR99

Power Dissipation-Max :

1.7W Ta

Number of Elements :

1

Drain-source On Resistance-Max :

6Ohm