BSO220N03MSGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 8.6A, 10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

10.4nC @ 10V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

1.56W

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

7A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Series :

OptiMOS™

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

7A Ta

Number of Elements :

1

Terminal Position :

Dual

Number of Terminations :

8

DS Breakdown Voltage-Min :

30V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.56W Ta

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.022Ohm