BSO083N03MSGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

9.4 ns

Turn-Off Delay Time :

11.5 ns

ECCN Code :

EAR99

Rise Time :

5ns

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

2100pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 14A, 10V

Published :

2011

Continuous Drain Current (ID) :

11A

DS Breakdown Voltage-Min :

30V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Power Dissipation :

1.56W

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

5.4 ns

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Series :

OptiMOS™

Number of Pins :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Radiation Hardening :

No

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Power Dissipation-Max :

1.56W Ta

Vgs(th) (Max) @ Id :

2V @ 250μA

FET Type :

N-Channel

Number of Elements :

1

Terminal Form :

Gull wing