BSO080P03NS3GXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3.1V @ 150μA

Power Dissipation-Max :

1.6W Ta

Operating Temperature :

-55°C~150°C TJ

Rise Time :

47ns

Number of Elements :

1

Series :

OptiMOS™

Number of Terminations :

8

Power Dissipation :

1.6W

Input Capacitance (Ciss) (Max) @ Vds :

6750pF @ 15V

Rds On (Max) @ Id, Vgs :

8m Ω @ 14.8A, 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

FET Type :

P-Channel

Continuous Drain Current (ID) :

14.8A

Max Dual Supply Voltage :

-30V

Published :

2011

Contact Plating :

Tin

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

30V

Qualification Status :

Not Qualified

Pin Count :

8

ECCN Code :

EAR99

Terminal Form :

Gull wing

Factory Lead Time :

18 Weeks

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3