BSO051N03MSGXUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS?3 M

Package :

Bulk

FET Feature :

-

Rds On (Max) @ Id, Vgs :

5.1mOhm @ 18A, 10V

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Channel Type :

N

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Power Dissipation :

1.56

FET Type :

N-Channel

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C ~ 150°C

Drain to Source Voltage (Vdss) :

30 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3200 pF @ 15 V

Terminal Position :

Dual

Power Dissipation (Max) :

2.5W

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

30 V

Supplier Device Package :

PG-DSO-8

Drain-source On Resistance-Max :

0.0051 Ω

Surface Mount :

yes

Factory Lead Time :

1 Week

Manufacturer :

Infineon Technologies AG

Current - Continuous Drain (Id) @ 25°C :

14A

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

2V @ 250μA

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

-

Number of Terminals :

8

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

Package Shape :

RECTANGULAR

Continuous Drain Current Id :

14

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING