BSO083N03MSG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

JESD-609 Code :

e3

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Package Shape :

RECTANGULAR

Manufacturer :

Infineon Technologies AG

Channel Type :

N

Rds On (Max) @ Id, Vgs :

8.3mOhm @ 14A, 10V

Product Status :

Active

Number of Terminals :

8

Input Capacitance (Ciss) (Max) @ Vds :

2100 pF @ 15 V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max (Abs) :

2.5 W

ECCN Code :

EAR99

Surface Mount :

yes

Package :

Bulk

Vgs(th) (Max) @ Id :

2V @ 250μA

Subcategory :

FET General Purpose Power

Terminal Position :

Dual

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30 V

FET Type :

N-Channel

Terminal Form :

Gull wing

Continuous Drain Current Id :

11

Pbfree Code :

yes

Supplier Device Package :

PG-DSO-8

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

11A (Ta)

Pin Count :

8

Number of Elements :

1

Series :

OptiMOS™ 3

Drain Current-Max (Abs) (ID) :

11 A

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Transistor Application :

SWITCHING

Technology :

MOSFET (Metal Oxide)

Power Dissipation (Max) :

1.56W (Ta)

Drain to Source Voltage (Vdss) :

30 V

Power Dissipation :

1.56

Reach Compliance Code :

Compliant

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0083 Ω

FET Feature :

-

Transistor Element Material :

SILICON