BSM080D12P2C008

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pulsed Drain Current-Max (IDM) :

160A

FET Feature :

Silicon Carbide (SiC)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Pins :

10

Reach Compliance Code :

not_compliant

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Number of Terminations :

8

Packaging :

Tray

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

175°C TJ

Max Power Dissipation :

600W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-XUFM-X8

Factory Lead Time :

25 Weeks

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

UNSPECIFIED

Continuous Drain Current (ID) :

80A

DS Breakdown Voltage-Min :

1200V

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Mounting Type :

Chassis Mount

Package / Case :

Module

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 13.2mA

Surface Mount :

No