BFN26E6433HTMA1
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- Mfr.Part #
- BFN26E6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT23
- Stock
- 14,744
- In Stock ：
- 14,744
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 70MHz
- Transition Frequency :
- 70MHz
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Current - Collector (Ic) (Max) :
- 200mA
- Power Dissipation :
- 360mW
- Base Part Number :
- BFN26
- Collector Base Voltage (VCBO) :
- 300V
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 300V
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 200mA
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2007
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 360mW
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 300V
- RoHS Status :
- RoHS Compliant
- Configuration :
- Single
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Datasheets
- BFN26E6433HTMA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BFN26E6433HTMA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 30mA 10V.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 70MHz.A maximum collector current of 200mA volts can be achieved.
BFN26E6433HTMA1 Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
a transition frequency of 70MHz
BFN26E6433HTMA1 Applications
There are a lot of Infineon Technologies
BFN26E6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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