BFN27E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Transistor Element Material :

SILICON

Max Collector Current :

200mA

hFE Min :

30

Current Rating :

-200mA

Operating Temperature :

150°C TJ

Mounting Type :

Surface Mount

Max Breakdown Voltage :

300V

Emitter Base Voltage (VEBO) :

5V

Base Part Number :

BFN27

Published :

2007

ECCN Code :

EAR99

Frequency :

100MHz

Contact Plating :

Tin

Height :

900μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 30mA 10V

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

500mV

Lead Free :

Lead Free

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

PNP

Transistor Application :

SWITCHING

Terminal Position :

Dual

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Type :

PNP

Width :

1.3mm

Max Power Dissipation :

360mW

Current - Collector Cutoff (Max) :

100nA ICBO

Voltage - Rated DC :

-300V

Collector Base Voltage (VCBO) :

300V

Transition Frequency :

100MHz

Pbfree Code :

yes

Mount :

Surface Mount

Number of Elements :

1

Collector Emitter Breakdown Voltage :

300V

Terminal Form :

Gull wing

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Element Configuration :

Single

Halogen Free :

Not Halogen Free

Collector Emitter Voltage (VCEO) :

10V

Packaging :

Tape and Reel (TR)

Power Dissipation :

360mW

JESD-609 Code :

e3

Length :

2.9mm

Radiation Hardening :

No