BFN26E6327HTSA1
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- Mfr.Part #
- BFN26E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.2A SOT23
- Stock
- 5,775
- In Stock ：
- 5,775
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 70MHz
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Max Collector Current :
- 200mA
- Collector Emitter Breakdown Voltage :
- 300V
- Polarity/Channel Type :
- NPN
- Length :
- 2.9mm
- Width :
- 1.3mm
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 300V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- hFE Min :
- 30
- ECCN Code :
- EAR99
- Halogen Free :
- Not Halogen Free
- Max Power Dissipation :
- 360mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Published :
- 2007
- Height :
- 900μm
- Base Part Number :
- BFN26
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Frequency :
- 70MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 360mW
- Voltage - Rated DC :
- 300V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 10V
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 300V
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 200mA
- Datasheets
- BFN26E6327HTSA1
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BFN26E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 70MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BFN26E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 70MHz
BFN26E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN26E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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