BF998E6327HTSA1

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Mfr.Part #
BF998E6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-253-4, TO-253AA
Datasheet
Download
Description
MOSFET N-CH 12V 200MA SOT-143
Stock
645,738
In Stock :
645,738

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - RF
Number of Pins :
4
Transistor Type :
N-Channel
Max Operating Temperature :
150°C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-253-4, TO-253AA
Min Operating Temperature :
-55°C
Height :
1mm
Length :
2.9mm
Terminal Form :
Gull wing
Lead Free :
Lead Free
Published :
2001
Frequency :
45MHz
Current - Test :
10mA
Factory Lead Time :
4 Weeks
Pin Count :
4
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gain :
28dB
Mount :
Surface Mount
Terminal Position :
Dual
Number of Elements :
1
Base Part Number :
BF998
Halogen Free :
Not Halogen Free
Operating Mode :
DUAL GATE, DEPLETION MODE
Width :
1.3mm
Voltage - Rated DC :
12V
Packaging :
Tape and Reel (TR)
Case Connection :
SOURCE
Continuous Drain Current (ID) :
30mA
ECCN Code :
EAR99
Max Power Dissipation :
200mW
Drain Current-Max (Abs) (ID) :
0.03A
Number of Terminations :
4
Pbfree Code :
yes
Noise Figure :
2.8dB
Contact Plating :
Tin
Current Rating :
30mA
Configuration :
Single
Gate to Source Voltage (Vgs) :
8V
JESD-609 Code :
e3
Radiation Hardening :
No
Number of Channels :
1
Input Capacitance :
1.2pF
Datasheets
BF998E6327HTSA1
Introducing Transistors - FETs, MOSFETs - RF Infineon Technologies BF998E6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:TO-253-4, TO-253AA, Gain:28dB, Base Part Number:BF998, Number of Terminations:4, Number of Channels:1, BF998E6327HTSA1 pinout, BF998E6327HTSA1 datasheet PDF, BF998E6327HTSA1 amp .Beyond Transistors - FETs, MOSFETs - RF Infineon Technologies BF998E6327HTSA1 ,we also offer BLF174XR,112, BLF2425M9L30U, BLF183XRU, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BF998E6327HTSA1


BF998E6327HTSA1 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Infineon Technologies stock available at

BF998E6327HTSA1 Description

 

BF998E6327HTSA1 N-Channel MOSFET is a type of Power MOSFET that is build on a  semiconductor process optimized to combine performance with reliability. BF998E6327HTSA1 MOSFET is ideal for low frequency applications requiring performance and ruggedness. Infineon Technologies BF998E6327HTSA1 is general use and is suitable for Fast EV charging, Motor control and drives, Solutions for solar energy systems, and Uninterruptible Power Supply.

 

 

BF998E6327HTSA1 Features

 

Reduced system complexity

Reduced cooling effort

Highest efficiency

Increased power density

Higher frequency operation

 

 

BF998E6327HTSA1 Applications

 

Fast EV charging

Motor control and drives

Solutions for solar energy systems

Uninterruptible Power Supply

 


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