BF996S,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

DS Breakdown Voltage-Min :

20V

Operating Temperature (Max) :

150°C

Voltage - Rated :

20V

Published :

1996

Peak Reflow Temperature (Cel) :

260

Current Rating (Amps) :

30mA

Current - Test :

10mA

Frequency :

200MHz

HTS Code :

8541.21.00.75

Base Part Number :

BF996

Power Dissipation-Max (Abs) :

0.2W

Operating Mode :

DUAL GATE, DEPLETION MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Gain :

25dB

Drain Current-Max (Abs) (ID) :

0.03A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Factory Lead Time :

13 Weeks

Noise Figure :

1dB

Packaging :

Tape and Reel (TR)

Transistor Type :

N-Channel Dual Gate

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Test :

15V

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Package / Case :

TO-253-4, TO-253AA

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Surface Mount :

yes

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Case Connection :

SOURCE

Terminal Form :

Gull wing

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PDSO-G4

Number of Terminations :

4