BF996S,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Factory Lead Time :

13 Weeks

Number of Elements :

1

Frequency :

200MHz

JESD-609 Code :

e3

Published :

1996

Operating Mode :

DUAL GATE, DEPLETION MODE

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

JESD-30 Code :

R-PDSO-G4

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

HTS Code :

8541.21.00.75

Current - Test :

10mA

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature (Max) :

150°C

Noise Figure :

1dB

Package / Case :

TO-253-4, TO-253AA

Case Connection :

SOURCE

Surface Mount :

yes

Voltage - Test :

15V

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Power Dissipation-Max (Abs) :

0.2W

Base Part Number :

BF996

ECCN Code :

EAR99

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Transistor Type :

N-Channel Dual Gate

Peak Reflow Temperature (Cel) :

260

Pin Count :

4

Voltage - Rated :

20V

Gain :

25dB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.03A

Current Rating (Amps) :

30mA