BF996S,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Base Part Number :

BF996

Power Dissipation-Max (Abs) :

0.2W

Terminal Finish :

Tin (Sn)

HTS Code :

8541.21.00.75

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G4

Operating Mode :

DUAL GATE, DEPLETION MODE

Terminal Form :

Gull wing

Current Rating (Amps) :

30mA

Noise Figure :

1dB

Number of Terminations :

4

Factory Lead Time :

13 Weeks

Transistor Element Material :

SILICON

Current - Test :

10mA

Transistor Type :

N-Channel Dual Gate

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Drain Current-Max (Abs) (ID) :

0.03A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Gain :

25dB

Published :

1996

Qualification Status :

Not Qualified

Voltage - Rated :

20V

Operating Temperature (Max) :

150°C

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Pin Count :

4

Frequency :

200MHz

Package / Case :

TO-253-4, TO-253AA

Voltage - Test :

15V

Case Connection :

SOURCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

DS Breakdown Voltage-Min :

20V