BF992,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Factory Lead Time :

13 Weeks

JESD-30 Code :

R-PDSO-G4

HTS Code :

8541.21.00.75

Transistor Type :

N-Channel Dual Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Voltage - Test :

10V

Package / Case :

TO-253-4, TO-253AA

Base Part Number :

BF992

Case Connection :

SOURCE

Pin Count :

4

Feedback Cap-Max (Crss) :

0.04 pF

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1999

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Number of Elements :

1

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

20V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Noise Figure :

1.2dB

Current Rating (Amps) :

40mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated :

20V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Current - Test :

15mA

Transistor Application :

AMPLIFIER

Operating Mode :

DUAL GATE, DEPLETION MODE

Frequency :

200MHz

Operating Temperature (Max) :

150°C

Terminal Form :

Gull wing

Number of Terminations :

4

Power Dissipation-Max (Abs) :

0.2W

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

0.04A