BF992,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Temperature (Max) :

150°C

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

4

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.04A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

N-Channel Dual Gate

Pin Count :

4

Terminal Finish :

Tin (Sn)

Factory Lead Time :

13 Weeks

Package / Case :

TO-253-4, TO-253AA

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Noise Figure :

1.2dB

Peak Reflow Temperature (Cel) :

260

Current - Test :

15mA

Feedback Cap-Max (Crss) :

0.04 pF

RoHS Status :

ROHS3 Compliant

Operating Mode :

DUAL GATE, DEPLETION MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

20V

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

0.2W

Base Part Number :

BF992

Voltage - Test :

10V

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Current Rating (Amps) :

40mA

Configuration :

SINGLE WITH BUILT-IN DIODE

Frequency :

200MHz

JESD-30 Code :

R-PDSO-G4

Case Connection :

SOURCE

Published :

1999

Qualification Status :

Not Qualified

Number of Elements :

1

Voltage - Rated :

20V

HTS Code :

8541.21.00.75

Surface Mount :

yes