BF998,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Current - Test :

10mA

Number of Elements :

1

Frequency :

200MHz

Power Dissipation-Max (Abs) :

0.2W

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Published :

1996

JESD-30 Code :

R-PDSO-G4

Terminal Form :

Gull wing

Additional Feature :

LOW NOISE

Terminal Finish :

Tin (Sn)

Current Rating (Amps) :

30mA

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Noise Figure :

0.6dB

Transistor Element Material :

SILICON

Surface Mount :

yes

DS Breakdown Voltage-Min :

12V

Voltage - Rated :

12V

Transistor Application :

AMPLIFIER

Transistor Type :

N-Channel Dual Gate

Base Part Number :

BF998

HTS Code :

8541.21.00.75

Voltage - Test :

8V

Packaging :

Tape and Reel (TR)

Case Connection :

SOURCE

Operating Temperature (Max) :

150°C

Drain Current-Max (Abs) (ID) :

0.03A

Operating Mode :

DUAL GATE, DEPLETION MODE

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Package / Case :

TO-253-4, TO-253AA

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

260