BF1105R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Noise Figure :

1.7dB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Frequency :

800MHz

Number of Terminations :

4

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BF1105

Drain Current-Max (Abs) (ID) :

0.03A

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Pin Count :

4

Feedback Cap-Max (Crss) :

0.04 pF

DS Breakdown Voltage-Min :

7V

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Configuration :

Single

Voltage - Test :

5V

JESD-609 Code :

e3

Transistor Type :

N-Channel Dual Gate

Case Connection :

SOURCE

Transistor Application :

AMPLIFIER

Gain :

20dB

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

ECCN Code :

EAR99

Voltage - Rated :

7V

Current Rating (Amps) :

30mA

Published :

1997

Number of Elements :

1

HTS Code :

8541.21.00.75

Package / Case :

SOT-143R

Operating Temperature (Max) :

150°C

Factory Lead Time :

13 Weeks