BF1105R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Temperature (Max) :

150°C

Terminal Form :

Gull wing

Pin Count :

4

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Type :

N-Channel Dual Gate

JESD-609 Code :

e3

Transistor Application :

AMPLIFIER

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Voltage - Test :

5V

Base Part Number :

BF1105

Frequency :

800MHz

Transistor Element Material :

SILICON

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Case Connection :

SOURCE

Noise Figure :

1.7dB

Voltage - Rated :

7V

Factory Lead Time :

13 Weeks

Feedback Cap-Max (Crss) :

0.04 pF

Published :

1997

Package / Case :

SOT-143R

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

7V

Number of Terminations :

4

Configuration :

Single

Surface Mount :

yes

Current Rating (Amps) :

30mA

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PDSO-G4

Gain :

20dB

Drain Current-Max (Abs) (ID) :

0.03A

HTS Code :

8541.21.00.75