BF1105R,215

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

DS Breakdown Voltage-Min :

7V

Terminal Finish :

Tin (Sn)

Pin Count :

4

Number of Terminations :

4

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

1

Qualification Status :

Not Qualified

Factory Lead Time :

13 Weeks

Operating Temperature (Max) :

150°C

JESD-609 Code :

e3

Voltage - Rated :

7V

Noise Figure :

1.7dB

Configuration :

Single

Feedback Cap-Max (Crss) :

0.04 pF

Voltage - Test :

5V

Peak Reflow Temperature (Cel) :

260

Frequency :

800MHz

JESD-30 Code :

R-PDSO-G4

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

HTS Code :

8541.21.00.75

Package / Case :

SOT-143R

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

0.03A

Base Part Number :

BF1105

Transistor Type :

N-Channel Dual Gate

Transistor Application :

AMPLIFIER

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Current Rating (Amps) :

30mA

ECCN Code :

EAR99

Surface Mount :

yes

Gain :

20dB

Case Connection :

SOURCE

Published :

1997