BF1100WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Current - Test :

10mA

Transistor Type :

N-Channel Dual Gate

Noise Figure :

2dB

ECCN Code :

EAR99

Published :

1995

DS Breakdown Voltage-Min :

14V

JESD-30 Code :

R-PDSO-G4

Surface Mount :

yes

Pin Count :

4

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Configuration :

COMPLEX

Frequency :

800MHz

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SC-82A, SOT-343

Reach Compliance Code :

Unknown

Operating Temperature (Max) :

150°C

Voltage - Rated :

14V

Current Rating (Amps) :

30mA

Additional Feature :

LOW NOISE

Drain Current-Max (Abs) (ID) :

0.03A

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Number of Terminations :

4

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

Base Part Number :

BF1100

Case Connection :

SOURCE

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

HTS Code :

8541.21.00.75

Voltage - Test :

9V

Feedback Cap-Max (Crss) :

0.035 pF