BF1102R,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

JESD-30 Code :

R-PDSO-G6

Terminal Finish :

Tin (Sn)

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

0.04A

Terminal Form :

Gull wing

Noise Figure :

2dB

Operating Temperature (Max) :

150°C

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Frequency :

800MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

JESD-609 Code :

e3

Configuration :

COMPLEX

Additional Feature :

LOW NOISE

HTS Code :

8541.21.00.75

Reach Compliance Code :

Unknown

Number of Elements :

2

Voltage - Rated :

7V

Feedback Cap-Max (Crss) :

0.05 pF

Transistor Type :

N-Channel Dual Gate

Voltage - Test :

5V

Base Part Number :

BF1102

Surface Mount :

yes

DS Breakdown Voltage-Min :

7V

Published :

2000

Qualification Status :

Not Qualified

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Current Rating (Amps) :

40mA

ECCN Code :

EAR99

Current - Test :

15mA

Transistor Application :

AMPLIFIER