BF1105WR,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - RF

Transistor Type :

N-Channel Dual Gate

Terminal Finish :

Tin (Sn)

Case Connection :

SOURCE

Configuration :

Single

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Voltage - Test :

5V

Operating Mode :

DUAL GATE, ENHANCEMENT MODE

Package / Case :

SC-82A, SOT-343

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PDSO-G4

Transistor Application :

AMPLIFIER

DS Breakdown Voltage-Min :

7V

Drain Current-Max (Abs) (ID) :

0.03A

Feedback Cap-Max (Crss) :

0.04 pF

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Frequency :

800MHz

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

yes

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Noise Figure :

1.7dB

Voltage - Rated :

7V

Gain :

20dB

Number of Terminations :

4

JESD-609 Code :

e3

Current Rating (Amps) :

30mA

Number of Elements :

1

ECCN Code :

EAR99

Operating Temperature (Max) :

150°C

Published :

1997

Base Part Number :

BF1105

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant