BD911

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.4mm

Collector Emitter Breakdown Voltage :

100V

hFE Min :

15

Transistor Element Material :

SILICON

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5A 4V

Max Collector Current :

15A

Collector Emitter Saturation Voltage :

1V

Collector Base Voltage (VCBO) :

100V

Transistor Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Transistor Application :

SWITCHING

Mount :

Through Hole

Max Power Dissipation :

90W

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Voltage - Rated DC :

100V

Package / Case :

TO-220-3

JESD-609 Code :

e3

Weight :

90.718474g

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

Current - Collector Cutoff (Max) :

1mA

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Base Part Number :

BD911

Current Rating :

15A

Lead Free :

Lead Free

Gain Bandwidth Product :

3MHz

VCEsat-Max :

3 V

Height :

9.15mm

Vce Saturation (Max) @ Ib, Ic :

3V @ 2.5A, 10A

Element Configuration :

Single

Frequency :

3MHz

Contact Plating :

Tin

Collector Emitter Voltage (VCEO) :

100V

Number of Terminations :

3

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

NPN

Power Dissipation :

90W

Transition Frequency :

3MHz

Number of Elements :

1

Width :

4.6mm

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3