BD910
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- Mfr.Part #
- BD910
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP 80V 15A TO220
- Stock
- 15,897
- In Stock ：
- 15,897
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Current - Collector Cutoff (Max) :
- 1mA
- Pbfree Code :
- yes
- Transition Frequency :
- 3MHz
- Transistor Type :
- PNP
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 5A 4V
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency :
- 3MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 90W
- Element Configuration :
- Single
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Polarity/Channel Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 2.5A, 10A
- Base Part Number :
- BD910
- Max Collector Current :
- 15A
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 3MHz
- REACH SVHC :
- No SVHC
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1V
- Mount :
- Through Hole
- VCEsat-Max :
- 3 V
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 40
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Max Power Dissipation :
- 90W
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BD910
BD910 Documents
PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole
BD910 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 4V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2.5A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 15A volts at its maximum.
BD910 Features
the DC current gain for this device is 15 @ 5A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2.5A, 10A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD910 Applications
There are a lot of STMicroelectronics
BD910 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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