BD910

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Mfr.Part #
BD910
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP 80V 15A TO220
Stock
15,897
In Stock :
15,897

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
REACH SVHC :
No SVHC
Gain Bandwidth Product :
3MHz
Collector Base Voltage (VCBO) :
80V
Mount :
Through Hole
Current - Collector Cutoff (Max) :
1mA
Frequency :
3MHz
Packaging :
Tube
Vce Saturation (Max) @ Ib, Ic :
3V @ 2.5A, 10A
JEDEC-95 Code :
TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 5A 4V
Pbfree Code :
yes
Transistor Element Material :
SILICON
Max Power Dissipation :
90W
Transistor Application :
SWITCHING
VCEsat-Max :
3 V
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
ECCN Code :
EAR99
Polarity/Channel Type :
PNP
Collector Emitter Voltage (VCEO) :
80V
Number of Terminations :
3
Radiation Hardening :
No
Mounting Type :
Through Hole
Base Part Number :
BD910
Element Configuration :
Single
Number of Pins :
3
Transition Frequency :
3MHz
Terminal Finish :
Matte Tin (Sn)
Collector Emitter Breakdown Voltage :
80V
JESD-609 Code :
e3
Operating Temperature :
150°C TJ
Pin Count :
3
Package / Case :
TO-220-3
hFE Min :
40
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
15A
Power Dissipation :
90W
Collector Emitter Saturation Voltage :
1V
Number of Elements :
1
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics BD910 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Base Part Number:BD910, Number of Pins:3, Operating Temperature:150°C TJ, Package / Case:TO-220-3, BD910 pinout, BD910 datasheet PDF, BD910 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics BD910 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics BD910


PNP 150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-220-3 Tube Through Hole

BD910 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 15 @ 5A 4V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 2.5A, 10A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 3MHz is present in the part.Collector current can be as low as 15A volts at its maximum.

BD910 Features


the DC current gain for this device is 15 @ 5A 4V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 3V @ 2.5A, 10A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz


BD910 Applications


There are a lot of STMicroelectronics
BD910 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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