BD239ATU
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- Mfr.Part #
- BD239ATU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A TO220-3
- Stock
- 10,372
- In Stock ：
- 10,372
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Weight :
- 1.8g
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 30W
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 30W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Qualification Status :
- Not Qualified
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 70V
- Current Rating :
- 2A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 60V
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 300μA
- Published :
- 2000
- Voltage - Rated DC :
- 60V
- Max Collector Current :
- 2A
- Transition Frequency :
- 3MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Saturation Voltage :
- 700mV
- hFE Min :
- 15
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 1A 4V
- Base Part Number :
- BD239
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 200mA, 1A
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Datasheets
- BD239ATU
NPN 150°C TJ 300μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BD239ATU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 700mV @ 200mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.During maximum operation, collector current can be as low as 2A volts.
BD239ATU Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD239ATU Applications
There are a lot of ON Semiconductor
BD239ATU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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