BD236STU

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Mfr.Part #
BD236STU
Manufacturer
onsemi
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS PNP 60V 2A TO126-3
Stock
42
In Stock :
42

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
PNP
ECCN Code :
EAR99
Gain Bandwidth Product :
3MHz
Collector Emitter Saturation Voltage :
-600mV
Current Rating :
-2A
Packaging :
Tube
Pbfree Code :
yes
Transistor Element Material :
SILICON
hFE Min :
25
RoHS Status :
RoHS Compliant
Frequency :
3MHz
Max Power Dissipation :
25W
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating :
Tin
Emitter Base Voltage (VEBO) :
-5V
Transition Frequency :
3MHz
Transistor Type :
PNP
Power Dissipation :
25W
REACH SVHC :
No SVHC
Published :
2000
Number of Elements :
1
Vce Saturation (Max) @ Ib, Ic :
600mV @ 100mA, 1A
Voltage - Rated DC :
-60V
Radiation Hardening :
No
Lead Free :
Lead Free
Max Collector Current :
2A
DC Current Gain (hFE) (Min) @ Ic, Vce :
25 @ 1A 2V
Collector Emitter Voltage (VCEO) :
60V
Number of Pins :
3
Collector Emitter Breakdown Voltage :
60V
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Through Hole
Number of Terminations :
3
Factory Lead Time :
6 Weeks
Mount :
Through Hole
Weight :
761mg
Operating Temperature :
150°C TJ
Collector Base Voltage (VCBO) :
-60V
Element Configuration :
Single
Package / Case :
TO-225AA, TO-126-3
Datasheets
BD236STU
Introducing Transistors - Bipolar (BJT) - Single onsemi BD236STU from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:150°C TJ, Package / Case:TO-225AA, TO-126-3, BD236STU pinout, BD236STU datasheet PDF, BD236STU amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BD236STU ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BD236STU


PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole

BD236STU Overview


In this device, the DC current gain is 25 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-2A).3MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.

BD236STU Features


the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -2A
a transition frequency of 3MHz


BD236STU Applications


There are a lot of ON Semiconductor
BD236STU applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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