BD234G
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- Mfr.Part #
- BD234G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 2A TO126
- Stock
- 262,208
- In Stock ：
- 262,208
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 25W
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Frequency :
- 3MHz
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- 60V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Emitter Saturation Voltage :
- 600mV
- Factory Lead Time :
- 2 Weeks
- Current Rating :
- -2A
- Power Dissipation :
- 25W
- Gain Bandwidth Product :
- 3MHz
- hFE Min :
- 40
- Surface Mount :
- No
- Transition Frequency :
- 3MHz
- Pin Count :
- 3
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Max Collector Current :
- 2A
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2005
- Package / Case :
- TO-225AA, TO-126-3
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Base Part Number :
- BD234
- Collector Emitter Breakdown Voltage :
- 45V
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Number of Pins :
- 3
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- -45V
- Datasheets
- BD234G
BD234G Documents
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PNP -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
BD234G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1A 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 100mA, 1A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 3MHz.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
BD234G Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 3MHz
BD234G Applications
There are a lot of ON Semiconductor
BD234G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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