BD237STU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

8mm

Weight :

761mg

Collector Base Voltage (VCBO) :

100V

Packaging :

Tube

Lifecycle Status :

LIFETIME (Last Updated: 15 hours ago)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Current - Collector Cutoff (Max) :

100μA ICBO

Mount :

Through Hole

Voltage - Rated DC :

80V

Number of Elements :

1

Radiation Hardening :

No

Transistor Element Material :

SILICON

Max Breakdown Voltage :

400V

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

80V

Published :

2001

Max Collector Current :

2A

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

80V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

25W

Lead Free :

Lead Free

Gain Bandwidth Product :

3MHz

Package / Case :

TO-225AA, TO-126-3

Number of Pins :

3

ECCN Code :

EAR99

Height :

11mm

Current Rating :

2A

Width :

3.25mm

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

600mV @ 100mA, 1A

Contact Plating :

Tin

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 1A 2V

Operating Temperature :

150°C TJ

Frequency :

3MHz

Element Configuration :

Single

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

3MHz

Collector Emitter Saturation Voltage :

600mV

Number of Terminations :

3

Base Part Number :

BD237

hFE Min :

25

Max Power Dissipation :

25W