BD237G
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- Mfr.Part #
- BD237G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A TO126
- Stock
- 61
- In Stock ：
- 61
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1A 2V
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- hFE Min :
- 40
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 80V
- Frequency :
- 3MHz
- Base Part Number :
- BD237
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 3MHz
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Max Collector Current :
- 2A
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-225AA, TO-126-3
- Current Rating :
- 2A
- Published :
- 2003
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 25W
- Pin Count :
- 3
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN
- Power Dissipation :
- 25W
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Transition Frequency :
- 3MHz
- Voltage - Rated DC :
- 80V
- Collector Emitter Saturation Voltage :
- 600mV
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 100mA, 1A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Datasheets
- BD237G
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NPN -55°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD237G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 1A 2V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 2A volts at its maximum.
BD237G Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD237G Applications
There are a lot of ON Semiconductor
BD237G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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