BD179
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- Mfr.Part #
- BD179
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 3A SOT32
- Stock
- 28,620
- In Stock ：
- 28,620
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 6.35mm
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Power Dissipation :
- 30W
- Collector Base Voltage (VCBO) :
- 80V
- Transistor Element Material :
- SILICON
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 800mV
- Contact Plating :
- Tin
- Factory Lead Time :
- 2 Weeks
- Height :
- 6.35mm
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Max Collector Current :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 80V
- Element Configuration :
- Single
- Base Part Number :
- BD179
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Current Rating :
- 3A
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 3MHz
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 63
- Number of Elements :
- 1
- Voltage - Rated DC :
- 80V
- Max Power Dissipation :
- 30W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Frequency :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2006
- Package / Case :
- TO-225AA, TO-126-3
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 31.75mm
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Surface Mount :
- No
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Transition Frequency :
- 3MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- BD179
NPN -65°C~150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Bulk Through Hole
BD179G Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD179G Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD179G Applications
There are a lot of ON Semiconductor
BD179G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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