BD17510STU
- Mfr.Part #
- BD17510STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 28,707
- In Stock :
- 28,707
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current Rating :
- 3A
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN
- Packaging :
- Tube
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Frequency :
- 3MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Weight :
- 761mg
- Collector Base Voltage (VCBO) :
- 45V
- Published :
- 2000
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 3MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Power Dissipation :
- 30W
- Transition Frequency :
- 3MHz
- Voltage - Rated DC :
- 45V
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- hFE Min :
- 40
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Saturation Voltage :
- 800mV
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Elements :
- 1
- Max Power Dissipation :
- 30W
- Datasheets
- BD17510STU

NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17510STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD17510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17510STU Applications
There are a lot of ON Semiconductor
BD17510STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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