BD17510STU
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- Mfr.Part #
- BD17510STU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 28,707
- In Stock ：
- 28,707
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 40
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Frequency :
- 3MHz
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 63 @ 150mA 2V
- Package / Case :
- TO-225AA, TO-126-3
- Packaging :
- Tube
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Weight :
- 761mg
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Published :
- 2000
- JESD-30 Code :
- R-PSFM-T3
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 3MHz
- Collector Base Voltage (VCBO) :
- 45V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Max Power Dissipation :
- 30W
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 45V
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Contact Plating :
- Tin
- Transition Frequency :
- 3MHz
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Current Rating :
- 3A
- Number of Elements :
- 1
- Power Dissipation :
- 30W
- ECCN Code :
- EAR99
- Max Collector Current :
- 3A
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 800mV
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Polarity/Channel Type :
- NPN
- Datasheets
- BD17510STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17510STU Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.
BD17510STU Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17510STU Applications
There are a lot of ON Semiconductor
BD17510STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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