BD17516STU
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- Mfr.Part #
- BD17516STU
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 3A TO126-3
- Stock
- 4,925
- In Stock ：
- 4,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 weeks ago)
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 800mV
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 40
- Mounting Type :
- Through Hole
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tube
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Qualification Status :
- Not Qualified
- Frequency :
- 3MHz
- Power Dissipation :
- 30W
- Collector Base Voltage (VCBO) :
- 45V
- Transistor Type :
- NPN
- JESD-30 Code :
- R-PSFM-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Weight :
- 761mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 150mA 2V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 100mA, 1A
- Factory Lead Time :
- 19 Weeks
- Max Power Dissipation :
- 30W
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Current Rating :
- 3A
- Package / Case :
- TO-225AA, TO-126-3
- Collector Emitter Voltage (VCEO) :
- 45V
- Voltage - Rated DC :
- 45V
- Max Collector Current :
- 3A
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Transition Frequency :
- 3MHz
- Published :
- 2000
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Datasheets
- BD17516STU
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole
BD17516STU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 2V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 100mA, 1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.A transition frequency of 3MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 3A volts at its maximum.
BD17516STU Features
the DC current gain for this device is 100 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz
BD17516STU Applications
There are a lot of ON Semiconductor
BD17516STU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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