BCW89,215
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- Mfr.Part #
- BCW89,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- NEXPERIA BCW89 - SMALL SIGNAL BI
- Stock
- 43,010
- In Stock ：
- 43,010
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Transition Frequency :
- 150MHz
- Number of Elements :
- 1
- Max Power Dissipation :
- 250mW
- Power Dissipation :
- 250mW
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Series :
- Automotive, AEC-Q101
- Mount :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Base Part Number :
- BCW89
- Lead Free :
- Lead Free
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Published :
- 2009
- Frequency :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Datasheets
- BCW89,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW89,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 100mA volts.
BCW89,215 Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCW89,215 Applications
There are a lot of Nexperia USA Inc.
BCW89,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BCW81 TR | NXP Semiconductors | 37,997 | BCW81 TR |
| BCW89 | NXP Semiconductors | 39,978 | TRANS PNP 60V 0.5A SOT23-3 |
| BCW89 | NXP Semiconductors | 39,978 | TRANS PNP 60V 0.5A SOT23-3 |
| BCW89,215 | NXP Semiconductors | 43,010 | TRANS PNP 60V 0.1A TO236AB |
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