BCW89,215
- Mfr.Part #
- BCW89,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.1A TO236AB
- Stock
- 43,010
- In Stock :
- 43,010
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Frequency :
- 150MHz
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Transition Frequency :
- 150MHz
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCW89
- Gain Bandwidth Product :
- 150MHz
- Series :
- Automotive, AEC-Q101
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Published :
- 2009
- Power Dissipation :
- 250mW
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- BCW89,215

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW89,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 60V volts.When collector current reaches its maximum, it can reach 100mA volts.
BCW89,215 Features
the DC current gain for this device is 120 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
BCW89,215 Applications
There are a lot of Nexperia USA Inc.
BCW89,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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