BCW89
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- Mfr.Part #
- BCW89
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A SOT23-3
- Stock
- 39,978
- In Stock ：
- 39,978
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Base Part Number :
- BCW89
- Collector Emitter Voltage (VCEO) :
- 60V
- Qualification Status :
- Not Qualified
- Published :
- 2003
- Contact Plating :
- Tin
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -300mV
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- hFE Min :
- 120
- Length :
- 2.92mm
- Power Dissipation :
- 350mW
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Current Rating :
- 200mA
- Emitter Base Voltage (VEBO) :
- -5V
- Polarity/Channel Type :
- PNP
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 60V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Width :
- 1.3mm
- Max Power Dissipation :
- 350mW
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 930μm
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Weight :
- 30mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Factory Lead Time :
- 39 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 5V
- Voltage - Rated DC :
- -60V
- Collector Base Voltage (VCBO) :
- -60V
- Transistor Element Material :
- SILICON
- Datasheets
- BCW89
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW89 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 2mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -300mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 500μA, 10mA.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
BCW89 Features
the DC current gain for this device is 120 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at -5V
the current rating of this device is 200mA
BCW89 Applications
There are a lot of ON Semiconductor
BCW89 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BCW81 TR | onsemi | 37,997 | BCW81 TR |
| BCW89 | onsemi | 39,978 | TRANS PNP 60V 0.5A SOT23-3 |
| BCW89,215 | onsemi | 43,010 | TRANS PNP 60V 0.1A TO236AB |
| BCW89,215 | onsemi | 43,010 | NEXPERIA BCW89 - SMALL SIGNAL BI |
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