BCW72LT1G
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- Mfr.Part #
- BCW72LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 13,786
- In Stock ：
- 13,786
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Width :
- 1.3mm
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Contact Plating :
- Tin
- Power Dissipation :
- 300mW
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Published :
- 2006
- Height :
- 940μm
- Length :
- 2.9mm
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Max Power Dissipation :
- 300mW
- Frequency :
- 300MHz
- Base Part Number :
- BCW72
- Emitter Base Voltage (VEBO) :
- 5V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Current Rating :
- 100mA
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 300MHz
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- REACH SVHC :
- No SVHC
- hFE Min :
- 200
- Surface Mount :
- yes
- Transition Frequency :
- 300MHz
- Voltage - Rated DC :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 210mV
- Datasheets
- BCW72LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW72LT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 500μA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BCW72LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BCW72LT1G Applications
There are a lot of ON Semiconductor
BCW72LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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