BCW61C
- Mfr.Part #
- BCW61C
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 32V 0.1A SOT23
- Stock
- 32,341
- In Stock :
- 32,341
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 32V
- Gain Bandwidth Product :
- 100MHz
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 250mW
- Number of Terminations :
- 3
- Published :
- 2009
- Turn Off Time-Max (toff) :
- 800ns
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 250mW
- Collector Emitter Voltage (VCEO) :
- 32V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Base Part Number :
- BCW61
- Frequency :
- 100MHz
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Additional Feature :
- LOW NOISE
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 32V
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 100MHz
- Datasheets
- BCW61C
PNP 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW61C,235 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2mA 5V.When VCE saturation is 550mV @ 1.25mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 100MHz.This device can take an input voltage of 32V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BCW61C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW61C,235 Applications
There are a lot of Nexperia USA Inc.
BCW61C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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