BCW60C,235
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- Mfr.Part #
- BCW60C,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 553,591
- In Stock ：
- 553,591
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 250mW
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Max Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 32V
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 32V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 250MHz
- Series :
- Automotive, AEC-Q101
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 250mW
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Radiation Hardening :
- No
- Turn Off Time-Max (toff) :
- 800ns
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 250MHz
- Collector Base Voltage (VCBO) :
- 32V
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- hFE Min :
- 40
- Base Part Number :
- BCW60
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCW60C,235
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60C,235 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 550mV @ 1.25mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 250MHz.During maximum operation, collector current can be as low as 100mA volts.
BCW60C,235 Features
the DC current gain for this device is 250 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60C,235 Applications
There are a lot of Nexperia USA Inc.
BCW60C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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