BCW60B,215
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- Mfr.Part #
- BCW60B,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 32V 0.1A TO236AB
- Stock
- 3,234
- In Stock ：
- 3,234
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 250MHz
- Factory Lead Time :
- 4 Weeks
- Forward Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 250MHz
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 250mW
- Published :
- 2002
- Contact Plating :
- Tin
- hFE Min :
- 20
- Max Repetitive Reverse Voltage (Vrrm) :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Forward Voltage :
- 550mV
- Termination :
- SMD/SMT
- Max Breakdown Voltage :
- 32V
- Collector Emitter Breakdown Voltage :
- 32V
- Max Collector Current :
- 100mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 32V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 250mW
- Turn Off Time-Max (toff) :
- 800ns
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 32V
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Series :
- Automotive, AEC-Q101
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Forward Surge Current (Ifsm) :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 1.25mA, 50mA
- Frequency :
- 250MHz
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Base Part Number :
- BCW60
- Datasheets
- BCW60B,215
NPN 150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW60B,215 Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 550mV @ 1.25mA, 50mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Input voltage breakdown is available at 32V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BCW60B,215 Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 250MHz
BCW60B,215 Applications
There are a lot of Nexperia USA Inc.
BCW60B,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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