BCV47TA
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- Mfr.Part #
- BCV47TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT23-3
- Stock
- 2,504
- In Stock ：
- 2,504
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Number of Terminations :
- 3
- Current Rating :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Weight :
- 7.994566mg
- Number of Elements :
- 1
- Published :
- 2006
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Frequency - Transition :
- 170MHz
- Lead Free :
- Lead Free
- Base Part Number :
- BCV47
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Cut Tape (CT)
- Max Power Dissipation :
- 330mW
- Height :
- 1.1mm
- Contact Plating :
- Tin
- Factory Lead Time :
- 15 Weeks
- Width :
- 1.4mm
- Number of Pins :
- 3
- Additional Feature :
- High Reliability
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- Emitter Base Voltage (VEBO) :
- 10V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transition Frequency :
- 170MHz
- Length :
- 3mm
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Darlington
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity :
- NPN
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- BCV47TA
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCV47TA Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 170MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV47TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz
BCV47TA Applications
There are a lot of Diodes Incorporated
BCV47TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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