BCV47TA
- Mfr.Part #
- BCV47TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT23-3
- Stock
- 2,504
- In Stock :
- 2,504
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 60V
- Published :
- 2006
- Pbfree Code :
- yes
- Polarity :
- NPN
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 1V
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 60V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Number of Pins :
- 3
- Max Power Dissipation :
- 330mW
- Contact Plating :
- Tin
- Continuous Collector Current :
- 500mA
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Additional Feature :
- High Reliability
- REACH SVHC :
- No SVHC
- Base Part Number :
- BCV47
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 170MHz
- Packaging :
- Cut Tape (CT)
- Height :
- 1.1mm
- Transistor Type :
- NPN - Darlington
- Transition Frequency :
- 170MHz
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 3
- Width :
- 1.4mm
- Length :
- 3mm
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 60V
- Current Rating :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 10V
- Max Collector Current :
- 500mA
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Datasheets
- BCV47TA

NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCV47TA Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 170MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV47TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz
BCV47TA Applications
There are a lot of Diodes Incorporated
BCV47TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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