BCV47TA
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- Mfr.Part #
- BCV47TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT23-3
- Stock
- 2,504
- In Stock ：
- 2,504
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.4mm
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 170MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Number of Elements :
- 1
- Height :
- 1.1mm
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Additional Feature :
- High Reliability
- Emitter Base Voltage (VEBO) :
- 10V
- Transition Frequency :
- 170MHz
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- NPN - Darlington
- Weight :
- 7.994566mg
- Base Part Number :
- BCV47
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 330mW
- Current Rating :
- 500mA
- Factory Lead Time :
- 15 Weeks
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Length :
- 3mm
- Mount :
- Surface Mount
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Packaging :
- Cut Tape (CT)
- Terminal Position :
- Dual
- Continuous Collector Current :
- 500mA
- Transistor Element Material :
- SILICON
- Datasheets
- BCV47TA
BCV47TA Documents
NPN - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BCV47TA Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 170MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV47TA Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz
BCV47TA Applications
There are a lot of Diodes Incorporated
BCV47TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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