BCV47,235
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- Mfr.Part #
- BCV47,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A TO236AB
- Stock
- 11,881
- In Stock ：
- 11,881
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 250mW
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 220MHz
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 220MHz
- Transistor Element Material :
- SILICON
- Base Part Number :
- BCV47
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Polarity :
- NPN
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 60V
- Max Power Dissipation :
- 250mW
- Transistor Type :
- NPN - Darlington
- Transistor Application :
- AMPLIFIER
- Published :
- 2006
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Series :
- Automotive, AEC-Q101
- Emitter Base Voltage (VEBO) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Saturation Voltage :
- 1V
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Terminal Position :
- Dual
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Datasheets
- BCV47,235
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV47,235 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.As you can see, the part has a transition frequency of 220MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
BCV47,235 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz
BCV47,235 Applications
There are a lot of Nexperia USA Inc.
BCV47,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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