BCV47E6327HTSA1
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- Mfr.Part #
- BCV47E6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT23
- Stock
- 27,802
- In Stock ：
- 27,802
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Length :
- 2.9mm
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Max Collector Current :
- 500mA
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- BCV47
- hFE Min :
- 10000
- Collector Emitter Breakdown Voltage :
- 60V
- Current Rating :
- 500mA
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Transition Frequency :
- 170MHz
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 60V
- Power Dissipation :
- 360mW
- Number of Terminations :
- 3
- Height :
- 1.1mm
- Frequency - Transition :
- 170MHz
- Max Breakdown Voltage :
- 60V
- Published :
- 2011
- Contact Plating :
- Tin
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Collector Emitter Saturation Voltage :
- 1V
- Halogen Free :
- Not Halogen Free
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 10V
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 26 Weeks
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Max Power Dissipation :
- 360mW
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Width :
- 1.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BCV47E6327HTSA1
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCV47E6327HTSA1 Overview
This device has a DC current gain of 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.A VCE saturation (Max) of 1V @ 100μA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 10V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 170MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 500mA volts is possible.
BCV47E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 170MHz
BCV47E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV47E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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