BCR512E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Terminations :

3

Published :

2002

Current Rating :

500mA

Terminal Finish :

Tin (Sn)

Gain Bandwidth Product :

100MHz

Halogen Free :

Not Halogen Free

Package / Case :

TO-236-3, SC-59, SOT-23-3

Element Configuration :

Single

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

50V

Terminal Position :

Dual

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-65°C

Length :

2.9mm

Max Operating Temperature :

150°C

Max Junction Temperature (Tj) :

150°C

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Transition Frequency :

100MHz

Max Collector Current :

500mA

Resistor - Emitter Base (R2) :

4.7 k Ω

Width :

1.3mm

Max Power Dissipation :

330mW

Collector Base Voltage (VCBO) :

50V

Collector Emitter Saturation Voltage :

300mV

Mounting Type :

Surface Mount

Number of Pins :

3

Terminal Form :

Gull wing

Resistor - Base (R1) :

4.7 k Ω

Voltage - Rated DC :

50V

Number of Elements :

1

Polarity :

NPN

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

hFE Min :

60

Height :

1.1mm

Current - Collector Cutoff (Max) :

100nA ICBO

Transistor Application :

SWITCHING

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 5V

Transistor Type :

NPN - Pre-Biased

Power Dissipation :

330mW

Base Part Number :

BCR512

Mount :

Surface Mount

Factory Lead Time :

26 Weeks

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

50V