BCR553E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

JESD-30 Code :

R-PDSO-G3

Frequency - Transition :

150MHz

RoHS Status :

ROHS3 Compliant

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Terminal Position :

Dual

Resistor - Base (R1) :

2.2 k Ω

Number of Elements :

1

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector (Ic) (Max) :

500mA

Transition Frequency :

150MHz

Voltage - Collector Emitter Breakdown (Max) :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Transistor Application :

SWITCHING

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 50mA 5V

Current - Collector Cutoff (Max) :

100nA ICBO

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Resistor - Emitter Base (R2) :

2.2 k Ω

Package / Case :

TO-236-3, SC-59, SOT-23-3

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Factory Lead Time :

26 Weeks

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

PNP

Surface Mount :

yes

Number of Terminations :

3

Power - Max :

330mW

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Transistor Type :

PNP - Pre-Biased

Published :

2011

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing