BCR523E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Termination :

SMD/SMT

Resistor - Base (R1) :

1 k Ω

Max Operating Temperature :

150°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

ECCN Code :

EAR99

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

50V

Resistor - Emitter Base (R2) :

10 k Ω

Published :

2002

Transistor Application :

SWITCHING

Factory Lead Time :

26 Weeks

Transition Frequency :

100MHz

Min Operating Temperature :

-65°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

330mW

Mounting Type :

Surface Mount

Number of Pins :

3

Power Dissipation :

330mW

Lead Free :

Lead Free

Height :

1.1mm

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

100nA ICBO

JESD-609 Code :

e3

Collector Emitter Breakdown Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Mount :

Surface Mount

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

300mV

Polarity :

NPN

Collector Base Voltage (VCBO) :

50V

Voltage - Rated DC :

50V

Max Breakdown Voltage :

50V

Halogen Free :

Not Halogen Free

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Current Rating :

500mA

Max Collector Current :

500mA

hFE Min :

70

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Frequency - Transition :

100MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Base Part Number :

BCR523

Transistor Type :

NPN - Pre-Biased

Max Junction Temperature (Tj) :

150°C

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G6