BCR198SH6327XTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Saturation Voltage :

300mV

Max Collector Current :

100mA

Max Operating Temperature :

150°C

Resistor - Base (R1) :

47k Ω

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Polarity :

PNP

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

hFE Min :

70

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 5mA 5V

Transition Frequency :

190MHz

Number of Elements :

2

Factory Lead Time :

26 Weeks

Published :

2009

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Width :

1.25mm

Length :

2mm

Frequency - Transition :

190MHz

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Transistor Type :

2 PNP - Pre-Biased (Dual)

Collector Emitter Voltage (VCEO) :

300mV

JESD-609 Code :

e3

Max Power Dissipation :

250mW

Number of Terminations :

6

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Resistor - Emitter Base (R2) :

47k Ω

Terminal Form :

Gull wing

Min Operating Temperature :

-65°C

Height :

800μm

Reference Standard :

AEC-Q101

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Collector Emitter Breakdown Voltage :

50V

Package / Case :

6-VSSOP, SC-88, SOT-363